Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells
are studied. The graded interfaces are described taking into account
fluctuations in their thickness a and positioning alpha with respect to
the abrupt interface picture. Numerical results for confined (0, 0), (1
1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that
while the interfacial fluctuations produce small changes (<0.5 meV) in
the exciton binding energies, the confined exciton energies can be red-
or blue-shifted as much as 25 meV for wells with mean width of 50
Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All
rights reserved.
%0 Journal Article
%1 WOS:000176520700034
%A Ferreira, EC
%A da Costa, JAP
%A Freire, JAK
%A Farias, GA
%A Freire, VN
%C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
%D 2002
%I ELSEVIER SCIENCE BV
%J APPLIED SURFACE SCIENCE
%K binding effects} energy; exciton; interface well; {quantum
%N 1-4
%P 191-194
%R 10.1016/S0169-4332(01)00891-1
%T Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single
quantum wells
%V 190
%X Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells
are studied. The graded interfaces are described taking into account
fluctuations in their thickness a and positioning alpha with respect to
the abrupt interface picture. Numerical results for confined (0, 0), (1
1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that
while the interfacial fluctuations produce small changes (<0.5 meV) in
the exciton binding energies, the confined exciton energies can be red-
or blue-shifted as much as 25 meV for wells with mean width of 50
Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All
rights reserved.
@article{WOS:000176520700034,
abstract = {Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells
are studied. The graded interfaces are described taking into account
fluctuations in their thickness a and positioning alpha with respect to
the abrupt interface picture. Numerical results for confined (0, 0), (1
1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that
while the interfacial fluctuations produce small changes (<0.5 meV) in
the exciton binding energies, the confined exciton energies can be red-
or blue-shifted as much as 25 meV for wells with mean width of 50
Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All
rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
author = {Ferreira, EC and da Costa, JAP and Freire, JAK and Farias, GA and Freire, VN},
biburl = {https://www.bibsonomy.org/bibtex/24f451283e7d8542a5474ab4bb272e7d7/ppgfis_ufc_br},
doi = {10.1016/S0169-4332(01)00891-1},
interhash = {8aecfeaa7385bb5c6dce5d516c3a1d1d},
intrahash = {4f451283e7d8542a5474ab4bb272e7d7},
issn = {0169-4332},
journal = {APPLIED SURFACE SCIENCE},
keywords = {binding effects} energy; exciton; interface well; {quantum},
note = {8th International Conference on the Formation of Semiconductor
Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001},
number = {1-4},
organization = {Japan Soc Appl Phys; Hokkaido Univ, Res Ctr Integrated Quantum Electr;
Int Sci Exchange Program Minist Educ, Culture, Sports, Sci & Technol
Japan},
pages = {191-194},
publisher = {ELSEVIER SCIENCE BV},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single
quantum wells},
tppubtype = {article},
volume = 190,
year = 2002
}