Theoretical results concerning the transmission properties of graded
GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are
presented. It is shown that the existence of nonabrupt interfaces shifts
the tunnelling resonances toward low energies, and is responsible for a
significant reduction in the splitting of the double resonant peaks. The
electric field effects on the transmission properties of GaAs/AlxGa1-xAs
DQW-TB also change when the existence of nonabrupt interfaces are
considered. (C) 1998 Elsevier Science B.V. All rights reserved.
%0 Journal Article
%1 WOS:000075867000029
%A Lima, MCA
%A Farias, GA
%A Freire, VN
%C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
%D 1998
%I ELSEVIER
%J MICROELECTRONIC ENGINEERING
%K GaAs/AlxGa1-xAs barriers} double effects; heterostructures; interface properties; quantum triple wells {tunnelling
%P 191-195
%R 10.1016/S0167-9317(98)00163-4
%T Interface effects on the resonant tunnelling in GaAs/AlxGa1-xAs
double-quantum-well triple-barriers
%V 43-4
%X Theoretical results concerning the transmission properties of graded
GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are
presented. It is shown that the existence of nonabrupt interfaces shifts
the tunnelling resonances toward low energies, and is responsible for a
significant reduction in the splitting of the double resonant peaks. The
electric field effects on the transmission properties of GaAs/AlxGa1-xAs
DQW-TB also change when the existence of nonabrupt interfaces are
considered. (C) 1998 Elsevier Science B.V. All rights reserved.
@article{WOS:000075867000029,
abstract = {Theoretical results concerning the transmission properties of graded
GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are
presented. It is shown that the existence of nonabrupt interfaces shifts
the tunnelling resonances toward low energies, and is responsible for a
significant reduction in the splitting of the double resonant peaks. The
electric field effects on the transmission properties of GaAs/AlxGa1-xAs
DQW-TB also change when the existence of nonabrupt interfaces are
considered. (C) 1998 Elsevier Science B.V. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
author = {Lima, MCA and Farias, GA and Freire, VN},
biburl = {https://www.bibsonomy.org/bibtex/2655c392a973e3c29fbf51c204560217c/ppgfis_ufc_br},
doi = {10.1016/S0167-9317(98)00163-4},
interhash = {229d53851d75022f77bc11cfcb7165c0},
intrahash = {655c392a973e3c29fbf51c204560217c},
issn = {0167-9317},
journal = {MICROELECTRONIC ENGINEERING},
keywords = {GaAs/AlxGa1-xAs barriers} double effects; heterostructures; interface properties; quantum triple wells {tunnelling},
note = {2nd International Conference on Low Dimensional Structures and Devices,
LISBON, PORTUGAL, MAY 19-21, 1997},
pages = {191-195},
publisher = {ELSEVIER},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Interface effects on the resonant tunnelling in GaAs/AlxGa1-xAs
double-quantum-well triple-barriers},
tppubtype = {article},
volume = {43-4},
year = 1998
}