As we demonstrated earlier, conventional mathematical models based on linear approximations may be inadequate in the analysis of properties of low-dimensional nanostructures and band structure calculations. In this work, a general three-dimensional axisymmetric coupled electromechanical model accounting for lattice mismatch, spontaneous polarization and higher-order nonlinear electrostriction effects has been applied to analyze properties of GaN/AlN quantum dots coupled with wetting layer. The generalized model that accounts for five independent electrostriction coefficients has been solved numerically via a finite-element implementation. The results, exemplified for truncated conical GaN/AlN quantum dots, demonstrate that the effect of nonlinear electrostriction in GaN/AlN nanoheterostructure quantum dots could be significant. In particular, the influence of nonlinear electromechanical effects on optoelectronic properties is highlighted by the results on band structure calculations based on a multiband effective mass theory.
%0 Journal Article
%1 BahramiSamani2010
%A Bahrami-Samani, Mehrdad
%A Patil, Sunil R
%A Melnik, Roderick
%D 2010
%J Journal of Physics: Condensed Matter
%K nitrides nonlinear
%N 49
%P 495301
%R 10.1088/0953-8984/22/49/495301
%T Higher-order nonlinear electromechanical effects in wurtzite GaN/AlN quantum dots
%U http://stacks.iop.org/0953-8984/22/i=49/a=495301
%V 22
%X As we demonstrated earlier, conventional mathematical models based on linear approximations may be inadequate in the analysis of properties of low-dimensional nanostructures and band structure calculations. In this work, a general three-dimensional axisymmetric coupled electromechanical model accounting for lattice mismatch, spontaneous polarization and higher-order nonlinear electrostriction effects has been applied to analyze properties of GaN/AlN quantum dots coupled with wetting layer. The generalized model that accounts for five independent electrostriction coefficients has been solved numerically via a finite-element implementation. The results, exemplified for truncated conical GaN/AlN quantum dots, demonstrate that the effect of nonlinear electrostriction in GaN/AlN nanoheterostructure quantum dots could be significant. In particular, the influence of nonlinear electromechanical effects on optoelectronic properties is highlighted by the results on band structure calculations based on a multiband effective mass theory.
@article{BahramiSamani2010,
abstract = {As we demonstrated earlier, conventional mathematical models based on linear approximations may be inadequate in the analysis of properties of low-dimensional nanostructures and band structure calculations. In this work, a general three-dimensional axisymmetric coupled electromechanical model accounting for lattice mismatch, spontaneous polarization and higher-order nonlinear electrostriction effects has been applied to analyze properties of GaN/AlN quantum dots coupled with wetting layer. The generalized model that accounts for five independent electrostriction coefficients has been solved numerically via a finite-element implementation. The results, exemplified for truncated conical GaN/AlN quantum dots, demonstrate that the effect of nonlinear electrostriction in GaN/AlN nanoheterostructure quantum dots could be significant. In particular, the influence of nonlinear electromechanical effects on optoelectronic properties is highlighted by the results on band structure calculations based on a multiband effective mass theory.},
added-at = {2011-08-02T14:31:16.000+0200},
author = {Bahrami-Samani, Mehrdad and Patil, Sunil R and Melnik, Roderick},
biburl = {https://www.bibsonomy.org/bibtex/26f2638adf16aa3b64189b261e285c2aa/lopusz},
doi = {10.1088/0953-8984/22/49/495301},
interhash = {0f218d9064a67529750d369cee5169aa},
intrahash = {6f2638adf16aa3b64189b261e285c2aa},
journal = {Journal of Physics: Condensed Matter},
keywords = {nitrides nonlinear},
number = 49,
pages = 495301,
timestamp = {2011-08-02T14:58:21.000+0200},
title = {Higher-order nonlinear electromechanical effects in wurtzite {GaN/AlN} quantum dots},
url = {http://stacks.iop.org/0953-8984/22/i=49/a=495301},
volume = 22,
year = 2010
}