%0 Journal Article %1 PhysRevB.107.L121102 %A Vidal, Raphael C. %A Marini, Giovanni %A Lunczer, Lukas %A Moser, Simon %A Fürst, Lena %A Issing, Julia %A Jozwiak, Chris %A Bostwick, Aaron %A Rotenberg, Eli %A Gould, Charles %A Buhmann, Hartmut %A Beugeling, Wouter %A Sangiovanni, Giorgio %A Di Sante, Domenico %A Profeta, Gianni %A Molenkamp, Laurens W. %A Bentmann, Hendrik %A Reinert, Friedrich %D 2023 %I American Physical Society %J Phys. Rev. B %K a %N 12 %P L121102 %R 10.1103/PhysRevB.107.L121102 %T Topological band inversion in HgTe(001): surface and bulk signatures from photoemission %U https://link.aps.org/doi/10.1103/PhysRevB.107.L121102 %V 107 %X HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular, due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of: (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its nontrivial band topology.

@article{PhysRevB.107.L121102, abstract = {HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular, due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of: (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its nontrivial band topology.}, added-at = {2023-05-16T10:26:18.000+0200}, author = {Vidal, Raphael C. and Marini, Giovanni and Lunczer, Lukas and Moser, Simon and Fürst, Lena and Issing, Julia and Jozwiak, Chris and Bostwick, Aaron and Rotenberg, Eli and Gould, Charles and Buhmann, Hartmut and Beugeling, Wouter and Sangiovanni, Giorgio and Di Sante, Domenico and Profeta, Gianni and Molenkamp, Laurens W. and Bentmann, Hendrik and Reinert, Friedrich}, biburl = {https://www.bibsonomy.org/bibtex/2a650d6716d3b227aaee541574a8c3833/ctqmat}, day = 14, description = {Topological band inversion in HgTe(001): surface and bulk signatures from photoemission}, doi = {10.1103/PhysRevB.107.L121102}, interhash = {1dd0b534e30379fb3977897d21c73876}, intrahash = {a650d6716d3b227aaee541574a8c3833}, journal = {Phys. Rev. B}, keywords = {a}, month = {03}, number = 12, numpages = {6}, pages = {L121102}, publisher = {American Physical Society}, timestamp = {2023-05-17T11:27:20.000+0200}, title = {Topological band inversion in HgTe(001): surface and bulk signatures from photoemission}, url = {https://link.aps.org/doi/10.1103/PhysRevB.107.L121102}, volume = 107, year = 2023 }