%0 Journal Article %1 Mahler_2021 %A Mahler, David M. %A Müller, Valentin L. %A Thienel, Cornelius %A Wiedenmann, Jonas %A Beugeling, Wouter %A Buhmann, Hartmut %A Molenkamp, Laurens W. %D 2021 %I American Chemical Society (ACS) %J Nano Letters %K qt %N 23 %P 9869--9874 %R 10.1021/acs.nanolett.1c02456 %T Massive and Topological Surface States in Tensile-Strained HgTe %U https://doi.org/10.1021%2Facs.nanolett.1c02456 %V 21 %X Magneto-transport measurements on gated highmobility heterostructures containing a 60 nm layer of tensile-strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the ptype regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k·p calculations that the p-type transport results from massive Volkov−Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of nconducting topological surface states and p-conducting Volkov−Pankratov states at the relevant gate voltages.

@article{Mahler_2021, abstract = {Magneto-transport measurements on gated highmobility heterostructures containing a 60 nm layer of tensile-strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the ptype regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k·p calculations that the p-type transport results from massive Volkov−Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of nconducting topological surface states and p-conducting Volkov−Pankratov states at the relevant gate voltages.}, added-at = {2022-07-05T10:11:54.000+0200}, author = {Mahler, David M. and Müller, Valentin L. and Thienel, Cornelius and Wiedenmann, Jonas and Beugeling, Wouter and Buhmann, Hartmut and Molenkamp, Laurens W.}, biburl = {https://www.bibsonomy.org/bibtex/26788669cf9dcdd6af5a142de5f6a666e/ep3qt}, doi = {10.1021/acs.nanolett.1c02456}, interhash = {69a7d68b470d4417222c4b82e268eaa6}, intrahash = {6788669cf9dcdd6af5a142de5f6a666e}, journal = {Nano Letters}, keywords = {qt}, month = {11}, number = 23, pages = {9869--9874}, publisher = {American Chemical Society ({ACS})}, timestamp = {2022-07-05T10:11:54.000+0200}, title = {Massive and Topological Surface States in Tensile-Strained {HgTe}}, url = {https://doi.org/10.1021%2Facs.nanolett.1c02456}, volume = 21, year = 2021 }