Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.
%0 Journal Article
%1 PhysRevLett.124.076802
%A Dartiailh, Matthieu C.
%A Hartinger, Simon
%A Gourmelon, Alexandre
%A Bendias, Kalle
%A Bartolomei, Hugo
%A Kamata, Hiroshi
%A Berroir, Jean-Marc
%A Fève, Gwendal
%A Plaçc\fiais, Bernard
%A Lunczer, Lukas
%A Schlereth, Raimund
%A Buhmann, Hartmut
%A Molenkamp, Laurens W.
%A Bocquillon, Erwann
%D 2020
%I American Physical Society
%J Phys. Rev. Lett.
%K qt
%N 7
%P 076802
%R 10.1103/PhysRevLett.124.076802
%T Dynamical Separation of Bulk and Edge Transport in HgTe-Based 2D Topological Insulators
%V 124
%X Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.
@article{PhysRevLett.124.076802,
abstract = {Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.},
added-at = {2020-04-06T13:30:34.000+0200},
author = {Dartiailh, Matthieu C. and Hartinger, Simon and Gourmelon, Alexandre and Bendias, Kalle and Bartolomei, Hugo and Kamata, Hiroshi and Berroir, Jean-Marc and F\`eve, Gwendal and Pla\ifmmode \mbox{\c{c}}\else \c{c}\fi{}ais, Bernard and Lunczer, Lukas and Schlereth, Raimund and Buhmann, Hartmut and Molenkamp, Laurens W. and Bocquillon, Erwann},
biburl = {https://www.bibsonomy.org/bibtex/2c5e45f0b04bf2c74ce0f62c806e37fc4/ep3qt},
doi = {10.1103/PhysRevLett.124.076802},
interhash = {a6574c3e6822aada88bb7615f810f0f1},
intrahash = {c5e45f0b04bf2c74ce0f62c806e37fc4},
journal = {Phys. Rev. Lett.},
keywords = {qt},
month = {02},
number = 7,
numpages = {6},
pages = 076802,
publisher = {American Physical Society},
timestamp = {2020-04-06T13:30:34.000+0200},
title = {Dynamical Separation of Bulk and Edge Transport in HgTe-Based 2D Topological Insulators},
volume = 124,
year = 2020
}