Abstract
We have experimentally investigated the effect of electron
temperature on transport in the two-dimensional Dirac surface states of the
three-dimensional topological insulator HgTe. We have found that around
the minimal conductivity point, where both electrons and holes are present,
heating the carriers with a DC current results in a nonmonotonic differential
resistance of narrow channels. We have shown that the observed initial
increase in resistance can be attributed to electron−hole scattering, while the
decrease follows naturally from the change in Fermi energy of the charge
carriers. Both effects are governed dominantly by a van Hove singularity in
the bulk valence band. The results demonstrate the importance of interband
electron−hole scattering in the transport properties of topological insulators.
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