Article,

Electron–Hole Scattering Limited Transport of Dirac Fermions in a Topological Insulator

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Nano Letters, (June 2021)
DOI: 10.1021/acs.nanolett.1c01271

Abstract

We have experimentally investigated the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We have found that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a nonmonotonic differential resistance of narrow channels. We have shown that the observed initial increase in resistance can be attributed to electron−hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron−hole scattering in the transport properties of topological insulators.

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