%0 Conference Paper %1 conf/icta3/QianGSWWLY21 %A Qian, Yijun %A Gao, Yuan %A Shukla, Amit Kumar %A Wu, Tao %A Wei, Xing %A Lu, Kai %A Yang, Yumeng %B ICTA %D 2021 %I IEEE %K dblp %P 239-240 %T Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET. %U http://dblp.uni-trier.de/db/conf/icta3/icta2021.html#QianGSWWLY21 %@ 978-1-6654-1747-1

@inproceedings{conf/icta3/QianGSWWLY21, added-at = {2023-11-10T00:00:00.000+0100}, author = {Qian, Yijun and Gao, Yuan and Shukla, Amit Kumar and Wu, Tao and Wei, Xing and Lu, Kai and Yang, Yumeng}, biburl = {https://www.bibsonomy.org/bibtex/220f5eeeb18d00f5ba021c4cd26aecc09/dblp}, booktitle = {ICTA}, crossref = {conf/icta3/2021}, ee = {https://doi.org/10.1109/ICTA53157.2021.9661921}, interhash = {23c8002d459ab4b01042ffd4efc31a27}, intrahash = {20f5eeeb18d00f5ba021c4cd26aecc09}, isbn = {978-1-6654-1747-1}, keywords = {dblp}, pages = {239-240}, publisher = {IEEE}, timestamp = {2024-04-09T17:04:07.000+0200}, title = {Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET.}, url = {http://dblp.uni-trier.de/db/conf/icta3/icta2021.html#QianGSWWLY21}, year = 2021 }