%0 Journal Article %1 WOS:000224739100046 %A Maia, FF %A Freire, JAK %A Freire, VN %A Farias, GA %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K gradual interfaces} quantum strain; superlattices; wells; {exciton; %N 1-4 %P 261-265 %R 10.1016/j.apsusc.2004.06.051 %T Interface properties in ZnSe/ZnS based strained superlattices and quantum wells %V 237 %X In this work, the excitonic properties of ZnSe/ZnSxSe1-x strained superlattices (SLs) and quantum wells (QWs) are studied taking into account spin-orbit splitting, strain, and interfacial effects. The broadening of excitonic related photoluminescence (PL) spectra due to the existence of gradual interfaces with thickness of 10 Angstrom is shown to be of the order of 30 meV for a 30 Angstrom ZnSe/ZnS0.18Se0.82 QW. (C) 2004 Elsevier B.V. All rights reserved.

@article{WOS:000224739100046, abstract = {In this work, the excitonic properties of ZnSe/ZnSxSe1-x strained superlattices (SLs) and quantum wells (QWs) are studied taking into account spin-orbit splitting, strain, and interfacial effects. The broadening of excitonic related photoluminescence (PL) spectra due to the existence of gradual interfaces with thickness of 10 Angstrom is shown to be of the order of 30 meV for a 30 Angstrom ZnSe/ZnS0.18Se0.82 QW. (C) 2004 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Maia, FF and Freire, JAK and Freire, VN and Farias, GA and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2fd1872ca251938735c4dedac3d982039/ppgfis_ufc_br}, doi = {10.1016/j.apsusc.2004.06.051}, interhash = {39d4bfd5d5946b35cfcab5e44052281a}, intrahash = {fd1872ca251938735c4dedac3d982039}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {gradual interfaces} quantum strain; superlattices; wells; {exciton;}, note = {7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003}, number = {1-4}, organization = {Japan Soc Appl Phys; Minist Educ, Culture, Sports, Sci & Technol; Commemorat Assoc Japan World Exposit 1970; Natl Inst Mat Sci; Nara Convent Bur}, pages = {261-265}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Interface properties in ZnSe/ZnS based strained superlattices and quantum wells}, tppubtype = {article}, volume = 237, year = 2004 }