%0 Journal Article %1 journals/mj/EsameGTB04 %A Esame, Onur %A Gurbuz, Yasar %A Tekin, Ibrahim %A Bozkurt, Ayhan %D 2004 %J Microelectron. J. %K dblp %N 11 %P 901-908 %T Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. %U http://dblp.uni-trier.de/db/journals/mj/mj35.html#EsameGTB04 %V 35

@article{journals/mj/EsameGTB04, added-at = {2021-07-25T00:00:00.000+0200}, author = {Esame, Onur and Gurbuz, Yasar and Tekin, Ibrahim and Bozkurt, Ayhan}, biburl = {https://www.bibsonomy.org/bibtex/2f4dd83213da217f93ca0ee1325b0177c/dblp}, ee = {https://doi.org/10.1016/j.mejo.2004.07.003}, interhash = {3e0dedde811a756d3b8cf78ac6094229}, intrahash = {f4dd83213da217f93ca0ee1325b0177c}, journal = {Microelectron. J.}, keywords = {dblp}, number = 11, pages = {901-908}, timestamp = {2024-04-08T21:37:21.000+0200}, title = {Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP.}, url = {http://dblp.uni-trier.de/db/journals/mj/mj35.html#EsameGTB04}, volume = 35, year = 2004 }