%0 Conference Paper %1 7543689 %A Ishida, K. %A Meister, T. %A Shabanpour, R. %A Boroujeni, B. K. %A Carta, C. %A Cantarella, G %A Petti, L. %A Mtozenrieder, N. %A Salvatore, G A. %A Troster, G %A Ellinger, F. %B 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) %D 2016 %K myown %P 273-276 %R 10.1109/AM-FPD.2016.7543689 %T Radio frequency electronics in a-IGZO TFT technology %U https://ieeexplore.ieee.org/document/7543689/ %X This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.

@inproceedings{7543689, abstract = {This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.}, added-at = {2023-05-22T11:54:01.000+0200}, author = {Ishida, K. and Meister, T. and Shabanpour, R. and Boroujeni, B. K. and Carta, C. and Cantarella, G and Petti, L. and Mtozenrieder, N. and Salvatore, G A. and Troster, G and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/2b411c47be7139ee10850108a0a599b72/nikomu}, booktitle = {2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)}, doi = {10.1109/AM-FPD.2016.7543689}, interhash = {484f6199b8194b99eeab72e80f2c7360}, intrahash = {b411c47be7139ee10850108a0a599b72}, keywords = {myown}, month = {July}, pages = {273-276}, timestamp = {2023-05-22T11:54:01.000+0200}, title = {Radio frequency electronics in a-IGZO TFT technology}, url = {https://ieeexplore.ieee.org/document/7543689/}, year = 2016 }