%0 Journal Article %1 journals/tcasII/TuriD20 %A Turi, Michael A. %A Delgado-Frias, José G. %D 2020 %J IEEE Trans. Circuits Syst. II Express Briefs %K dblp %N 4 %P 765-769 %T Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating. %U http://dblp.uni-trier.de/db/journals/tcas/tcasII67.html#TuriD20 %V 67-II

@article{journals/tcasII/TuriD20, added-at = {2023-11-06T00:00:00.000+0100}, author = {Turi, Michael A. and Delgado-Frias, José G.}, biburl = {https://www.bibsonomy.org/bibtex/2428b504bb399320bd20fc94bbd89e873/dblp}, ee = {https://doi.org/10.1109/TCSII.2019.2922921}, interhash = {786b64da6c4ed019ac3c52eb6b105c43}, intrahash = {428b504bb399320bd20fc94bbd89e873}, journal = {IEEE Trans. Circuits Syst. II Express Briefs}, keywords = {dblp}, number = 4, pages = {765-769}, timestamp = {2024-04-08T16:53:12.000+0200}, title = {Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating.}, url = {http://dblp.uni-trier.de/db/journals/tcas/tcasII67.html#TuriD20}, volume = {67-II}, year = 2020 }