%0 Journal Article %1 WOS:000183607400042 %A Pereira, TAS %A Freire, JAK %A Freire, VN %A Farias, GA %A Scolfaro, LMR %A Leite, JR %A da Silva, EF %C OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND %D 2003 %I ELSEVIER ADVANCED TECHNOLOGY %J MICROELECTRONICS JOURNAL %K energy; exciton luminescence} quantum well; {single %N 5-8 %P 507-509 %R 10.1016/S0026-2692(03)00091-0 %T Confined excitons in Si/SrTiO3 quantum wells %V 34 %X We propose Si/SrTiO3 single quantum well (SQWs) structures for silicon-based optoelectronic device applications. They are modeled according to experimental and theoretical data recently published. By assuming quantum confinement of carrier's, electron-light hole exciton and electron-heavy hole exciton based luminescence, the calculations show the possibility of Si/SrTiO3 SQWS Structures to emit light in the 1.00-1.20 mum wavelength range. Considering the existence of smooth interfaces up to 15 Angstrom. thick, we have demonstrated that shifts on the excitons energies as strong as 50 meV can be attained in the case of thin (similar to40 Angstrom) silicon wells. (C) 2003 Elsevier Science Ltd. All rights reserved.

@article{WOS:000183607400042, abstract = {We propose Si/SrTiO3 single quantum well (SQWs) structures for silicon-based optoelectronic device applications. They are modeled according to experimental and theoretical data recently published. By assuming quantum confinement of carrier's, electron-light hole exciton and electron-heavy hole exciton based luminescence, the calculations show the possibility of Si/SrTiO3 SQWS Structures to emit light in the 1.00-1.20 mum wavelength range. Considering the existence of smooth interfaces up to 15 Angstrom. thick, we have demonstrated that shifts on the excitons energies as strong as 50 meV can be attained in the case of thin (similar to40 Angstrom) silicon wells. (C) 2003 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND}, author = {Pereira, TAS and Freire, JAK and Freire, VN and Farias, GA and Scolfaro, LMR and Leite, JR and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2757d1089a22f4cf8b057a3676df12264/ppgfis_ufc_br}, doi = {10.1016/S0026-2692(03)00091-0}, interhash = {816331c7cbdf39028db4e1c176e41508}, intrahash = {757d1089a22f4cf8b057a3676df12264}, issn = {0026-2692}, journal = {MICROELECTRONICS JOURNAL}, keywords = {energy; exciton luminescence} quantum well; {single}, note = {Conference on Low Dimensional Structures and Devices (LDSD), FORTALEZA, BRAZIL, DEC 08-13, 2002}, number = {5-8}, pages = {507-509}, publisher = {ELSEVIER ADVANCED TECHNOLOGY}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Confined excitons in Si/SrTiO3 quantum wells}, tppubtype = {article}, volume = 34, year = 2003 }