Abstract
We use a linear-chain model with bond polarizabilities to simulate the
Raman spectrum of a Ge5Si5 microstructure which presents interface
roughness both in the atomic scale and in the form of terraces of
lateral dimensions equal or superior to 10(2) Angstrom. The model is not
very successful in reproducing the effects of the short range roughness,
but simulates effectively the consequences of terracing on the Raman
spectrum of our sample. A detailed line shape analysis of one of these
Raman lines leads to insights into the electronic states which are
responsible for the resonant effects in the Raman cross section.
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