%0 Journal Article %1 WOS:000316024500021 %A Rocha, G N %A Melo, L F L %A Dantas, S M %A Ayala, A P %A Sombra, A S B %A Almeida, A F L %A de Menezes, A S %A Fechine, P B A %C ONE NEW YORK PLAZA, SUITE 4600, NEW YORK, NY, UNITED STATES %D 2013 %I SPRINGER %J JOURNAL OF ELECTRONIC MATERIALS %K dielectric electroceramic} films; measurement; rare-earth thick tungstate; {Bismuth %N 4 %P 752-760 %R 10.1007/s11664-012-2428-4 %T Preparation and Study of Bismuth Rare-Earth Tungstate Composite Screen-Printed Thick Films %V 42 %X In this paper, we report the microstructural and dielectric properties of bismuth rare-earth tungstate composite screen-printed thick films (BiGd1-X Nd (X) WO6, BiGd1-X Y (X) WO6, and BiY1-X Nd (X) WO6). The crystal structure of BiREWO6 (RE = Gd, Nd, and Y) can be associated with the Bi2WO6 perovskite structure. It was observed that the crystalline structure was attributed to a monoclinic phase with space group A12/m1. BiYWO6 and BiY0.5Gd0.5WO6 films showed characteristics of the dielectric relaxation phenomenon. The thick films exhibited moderate dielectric permittivity (epsilon (r)') values from 10 to 42. The results showed that the obtained epsilon (r)' values for films can be useful for capacitor applications and certainly for microelectronics and microwave devices (mobile phones, for example), where miniaturization of devices is crucial.

@article{WOS:000316024500021, abstract = {In this paper, we report the microstructural and dielectric properties of bismuth rare-earth tungstate composite screen-printed thick films (BiGd1-X Nd (X) WO6, BiGd1-X Y (X) WO6, and BiY1-X Nd (X) WO6). The crystal structure of BiREWO6 (RE = Gd, Nd, and Y) can be associated with the Bi2WO6 perovskite structure. It was observed that the crystalline structure was attributed to a monoclinic phase with space group A12/m1. BiYWO6 and BiY0.5Gd0.5WO6 films showed characteristics of the dielectric relaxation phenomenon. The thick films exhibited moderate dielectric permittivity (epsilon (r)') values from 10 to 42. The results showed that the obtained epsilon (r)' values for films can be useful for capacitor applications and certainly for microelectronics and microwave devices (mobile phones, for example), where miniaturization of devices is crucial.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {ONE NEW YORK PLAZA, SUITE 4600, NEW YORK, NY, UNITED STATES}, author = {Rocha, G N and Melo, L F L and Dantas, S M and Ayala, A P and Sombra, A S B and Almeida, A F L and de Menezes, A S and Fechine, P B A}, biburl = {https://www.bibsonomy.org/bibtex/225020759d97b57d146407074a6d9f700/ppgfis_ufc_br}, doi = {10.1007/s11664-012-2428-4}, interhash = {9937e09c01f71c90510bdec50d4cdc7a}, intrahash = {25020759d97b57d146407074a6d9f700}, issn = {0361-5235}, journal = {JOURNAL OF ELECTRONIC MATERIALS}, keywords = {dielectric electroceramic} films; measurement; rare-earth thick tungstate; {Bismuth}, number = 4, pages = {752-760}, publisher = {SPRINGER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Preparation and Study of Bismuth Rare-Earth Tungstate Composite Screen-Printed Thick Films}, tppubtype = {article}, volume = 42, year = 2013 }