%0 Journal Article %1 journals/tvlsi/HeZWSZZ19 %A He, Yajuan %A Zhang, Jiubai %A Wu, Xiaoqing %A Si, Xin %A Zhen, Shaowei %A Zhang, Bo %D 2019 %J IEEE Trans. Very Large Scale Integr. Syst. %K dblp %N 10 %P 2344-2353 %T A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations. %U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#HeZWSZZ19 %V 27

@article{journals/tvlsi/HeZWSZZ19, added-at = {2021-10-14T00:00:00.000+0200}, author = {He, Yajuan and Zhang, Jiubai and Wu, Xiaoqing and Si, Xin and Zhen, Shaowei and Zhang, Bo}, biburl = {https://www.bibsonomy.org/bibtex/2bbc35174a22ada0ecbc9ec2f2602e6b2/dblp}, ee = {https://doi.org/10.1109/TVLSI.2019.2919104}, interhash = {1dfc4b2ce0cbdbf635fee7d55a3a993b}, intrahash = {bbc35174a22ada0ecbc9ec2f2602e6b2}, journal = {IEEE Trans. Very Large Scale Integr. Syst.}, keywords = {dblp}, number = 10, pages = {2344-2353}, timestamp = {2024-04-08T14:31:56.000+0200}, title = {A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations.}, url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#HeZWSZZ19}, volume = 27, year = 2019 }