Article,

Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

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Microelectromechanical Systems, Journal of, 21 (1): 4-6 (February 2012)
DOI: 10.1109/JMEMS.2011.2175704

Abstract

We demonstrate techniques for measuring thermoelectric voltages and generating on-chip power using a silicon-on-insulator substrate. Our design uses lateral heat conduction in the silicon overlayer to establish temperature gradients, which dramatically reduces microfabrication complexity compared to competing designs based on a free-standing membrane. This letter characterizes the thermoelectric power of a metal-semiconductor structure involving a doped SbTe alloy that is relevant for phase-change memory. The thermoelectric power of the SbTe-TiW thermocouple is 24 &#x03BC;V/K, and the power generation output achieves up to 0.56 &#x03BC;W/cm<sup>2</sup> with a temperature gradient of 18&#x00B0;K.

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