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ON ANALYTICAL APPROACH FOR ANALYSIS INFLUENCE OF MISMATCH-INDUCED STRESS IN A HETEROSTRUCTURE ON DISTRIBUTIONS OF CONCENTRATIONS OF DOPANTS IN A MULTIEMITTER HETEROTRANSISTOR

. Computer Applications: An International Journal (CAIJ),, 2 (1): 1-21 (02/2015 2015)

Abstract

In this paper we analytically model technological processes of manufacturing of multiemitter heterotransistors with account relaxation of mismatch-induced stress. Based on this modeling some recommendations to increase sharpness of p-n-junctions, which included into the transistors, and increasing compactness of the transistors have been formulated.

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