%0 Journal Article %1 WOS:000078799200053 %A Wang, H %A Farias, GA %A Freire, VN %C 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND %D 1999 %I ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD %J SUPERLATTICES AND MICROSTRUCTURES %K GaAs/AlxGa1-xAs doping; nonabrupt; quantum wells} {inhomogeneous %N 1-2 %P 307-311 %R 10.1006/spmi.1998.0653 %T Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1-xAs quantum wells %V 25 %X We study inhomogeneous doping effects on the confinement properties of modulation-doped single nonabrupt GaAs/AlxGa1-xAs quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrodinger (with a position dependent kinetic energy operator) and Poisson equations to obtain the electron energy levels. When the nonabrupt interfaces (space layer) are 10 Angstrom (100 Angstrom) wide and the presence of Si-dopant density in a 100 Angstrom GaAs well region is only 10% of the Si-dopant density in the Al0.3Ga0.7As barriers, the lowest intersubband transition energy increases 37 meV in comparison with that calculated within the homogeneous doping-abrupt interface picture. (C) 1999 Academic Press.

@article{WOS:000078799200053, abstract = {We study inhomogeneous doping effects on the confinement properties of modulation-doped single nonabrupt GaAs/AlxGa1-xAs quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrodinger (with a position dependent kinetic energy operator) and Poisson equations to obtain the electron energy levels. When the nonabrupt interfaces (space layer) are 10 Angstrom (100 Angstrom) wide and the presence of Si-dopant density in a 100 Angstrom GaAs well region is only 10% of the Si-dopant density in the Al0.3Ga0.7As barriers, the lowest intersubband transition energy increases 37 meV in comparison with that calculated within the homogeneous doping-abrupt interface picture. (C) 1999 Academic Press.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {24-28 OVAL RD, LONDON NW1 7DX, ENGLAND}, author = {Wang, H and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/2447b81053e659fe8140e25631abfdef6/ppgfis_ufc_br}, doi = {10.1006/spmi.1998.0653}, interhash = {25f60373c25c2b7706d7d12d4676b83f}, intrahash = {447b81053e659fe8140e25631abfdef6}, issn = {0749-6036}, journal = {SUPERLATTICES AND MICROSTRUCTURES}, keywords = {GaAs/AlxGa1-xAs doping; nonabrupt; quantum wells} {inhomogeneous}, note = {11th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-11), HURGADA, EGYPT, JUL 27-31, 1998}, number = {1-2}, pages = {307-311}, publisher = {ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1-xAs quantum wells}, tppubtype = {article}, volume = 25, year = 1999 }