%0 Journal Article %1 SCH05d %A Schneider, S. %A Borri, P. %A Langbein, W. %A Woggon, U. %A Sellin, R. L. %A Ouyang, D. %A Bimberg, D. %D 2005 %J Photonics Technology Letters, IEEE %K 293 298 III-V InGaAs InGaAs, K, amplifier, amplifiers amplifiers, arsenide, beam carrier-carrier compounds, current, detection, differential dot dynamics, electrically electron excited excited-state gain gallium ground-state heterodyne high-speed indium injection lasers, layer occupation, optical processing, pump-probe pumped pumping, quantum quantum-dot recovery, room scattering, semiconductor semiconductors, signal state states, techniques, temperature, to transmission, ultrafast wetting %N 10 %P 2014--2016 %R 10.1109/lpt.2005.856446 %T Excited-state gain dynamics in InGaAs quantum-dot amplifiers %V 17

@article{SCH05d, added-at = {2009-03-03T17:19:04.000+0100}, author = {Schneider, S. and Borri, P. and Langbein, W. and Woggon, U. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, biburl = {https://www.bibsonomy.org/bibtex/271f9f829b2f71fc8a739b27eae82af71/bronckobuster}, doi = {10.1109/lpt.2005.856446}, interhash = {448f1c5f2c82e9b3580b9340bb834bf6}, intrahash = {71f9f829b2f71fc8a739b27eae82af71}, issn = {1041-1135}, journal = {Photonics Technology Letters, IEEE}, keywords = {293 298 III-V InGaAs InGaAs, K, amplifier, amplifiers amplifiers, arsenide, beam carrier-carrier compounds, current, detection, differential dot dynamics, electrically electron excited excited-state gain gallium ground-state heterodyne high-speed indium injection lasers, layer occupation, optical processing, pump-probe pumped pumping, quantum quantum-dot recovery, room scattering, semiconductor semiconductors, signal state states, techniques, temperature, to transmission, ultrafast wetting}, number = 10, pages = {2014--2016}, timestamp = {2009-03-03T17:20:00.000+0100}, title = {Excited-state gain dynamics in InGaAs quantum-dot amplifiers}, volume = 17, year = 2005 }