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Design and Performance Analysis of Low Power RF Operational Amplifier using CMOS and BiCMOS Technology

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(2014)

Аннотация

This paper presents the design and performance comparison of a two stage operational amplifier topology using CMOS and BiCMOS technology. This conventional op amp circuit was designed by using RF model of BSIM3V3 in 0.6 μm CMOS technology and 0.35 μm BiCMOS technology. Both the op amp circuits were designed and simulated, analyzed and performance parameters are compared. The performance parameters such as gain, phase margin, CMRR, PSRR, power consumption etc achieved are compared. Finally, we conclude the suitability of CMOS technology over BiCMOS technology for low power RF design.

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