%0 Conference Paper %1 conf/iecon/LahbibDMDI17 %A Lahbib, Insaf %A Doukkali, Aziz %A Martin, Patrick %A Descamps, Philippe %A Imbert, Guy %B IECON %D 2017 %I IEEE %K dblp %P 7969-7973 %T Simulation and analysis of DC and RF performances degradation of NMOS transistors under hot carrier injection mechanism. %U http://dblp.uni-trier.de/db/conf/iecon/iecon2017.html#LahbibDMDI17 %@ 978-1-5386-1127-2

@inproceedings{conf/iecon/LahbibDMDI17, added-at = {2019-01-19T00:00:00.000+0100}, author = {Lahbib, Insaf and Doukkali, Aziz and Martin, Patrick and Descamps, Philippe and Imbert, Guy}, biburl = {https://www.bibsonomy.org/bibtex/2b8767e55be83d3f2244574726ff27c02/dblp}, booktitle = {IECON}, crossref = {conf/iecon/2017}, ee = {https://doi.org/10.1109/IECON.2017.8217397}, interhash = {c2fa56ade8b9283f8731c5595fdfc159}, intrahash = {b8767e55be83d3f2244574726ff27c02}, isbn = {978-1-5386-1127-2}, keywords = {dblp}, pages = {7969-7973}, publisher = {IEEE}, timestamp = {2019-10-17T21:23:36.000+0200}, title = {Simulation and analysis of DC and RF performances degradation of NMOS transistors under hot carrier injection mechanism.}, url = {http://dblp.uni-trier.de/db/conf/iecon/iecon2017.html#LahbibDMDI17}, year = 2017 }