Abstract
Within the effective mass approximation, we study the curvature effects
on the electronic and transport properties of semiconductor films. We
investigate how the geometry-induced potential resulting exclusively
from periodic ripples in the film induces electronic confinement and a
superlattice band structure. For fixed curvature parameters, such a
confinement can be easily tuned by an external electric field, hence
features of the superlattice band structure such as its energy gaps and
band curvature can be controlled by an external parameter. We also show
that, for some values of curvature and electric field, it is possible to
obtain massless Dirac bands for a smooth curved structure. Moreover, we
use a wave packet propagation method to demonstrate that the ripples are
responsible for a significant inter-sub-band transition, specially for
moderate values of the ripple height.
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