%0 Journal Article %1 WOS:000232455800016 %A da Silva, JB %A de Vasconcelos, EA %A dos Santos, BECA %A Freire, JAK %A Freire, VN %A Farias, GA %A da Silva, EF %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND %D 2005 %I ELSEVIER SCI LTD %J MICROELECTRONICS JOURNAL %K analysis; atomic force fractal microscopy; random rough self-affine silicon; surfaces; surfaces} {porous %N 11, SI %P 1011-1015 %R 10.1016/j.mejo.2005.04.007 %T Statistical analysis of topographic images of nanoporous silicon and model surfaces %V 36 %X We investigated the quantitative description of nanoporous silicon morphology and its correlation with electrical and optical properties. We performed first-order as well as second-order statistical analysis of AFM images of nanoporous silicon fabricated by two different methods: reaction-induced-vapor-phase-stain-etch and electrochemical. We also simulated AFM images by generation of various model surfaces. From the height-height correlation plots, we were able to observe the effects of the growth method on RMS roughness parameter and verify that photoluminescence can be observed despite very small changes in silicon surface morphology. The analysis of the model surfaces showed that it is possible to reproduce the self-affine character of the porous surfaces by means of a linear combination of sine surfaces. (c) 2005 Elsevier Ltd. All fights reserved.

@article{WOS:000232455800016, abstract = {We investigated the quantitative description of nanoporous silicon morphology and its correlation with electrical and optical properties. We performed first-order as well as second-order statistical analysis of AFM images of nanoporous silicon fabricated by two different methods: reaction-induced-vapor-phase-stain-etch and electrochemical. We also simulated AFM images by generation of various model surfaces. From the height-height correlation plots, we were able to observe the effects of the growth method on RMS roughness parameter and verify that photoluminescence can be observed despite very small changes in silicon surface morphology. The analysis of the model surfaces showed that it is possible to reproduce the self-affine character of the porous surfaces by means of a linear combination of sine surfaces. (c) 2005 Elsevier Ltd. All fights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND}, author = {da Silva, JB and de Vasconcelos, EA and dos Santos, BECA and Freire, JAK and Freire, VN and Farias, GA and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2979d070b0431ff77ebe949a633a310ad/ppgfis_ufc_br}, doi = {10.1016/j.mejo.2005.04.007}, interhash = {f7e70b13988aab9bcc058296b81e87e3}, intrahash = {979d070b0431ff77ebe949a633a310ad}, issn = {0026-2692}, journal = {MICROELECTRONICS JOURNAL}, keywords = {analysis; atomic force fractal microscopy; random rough self-affine silicon; surfaces; surfaces} {porous}, note = {4th Workshop on Semiconductor Nanodevices and Nanostructured Materials, Sao Pedro, BRAZIL, MAR 09-13, 2005}, number = {11, SI}, pages = {1011-1015}, publisher = {ELSEVIER SCI LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Statistical analysis of topographic images of nanoporous silicon and model surfaces}, tppubtype = {article}, volume = 36, year = 2005 }