%0 Journal Article %1 WOS:000259759500019 %A Fechine, P B A %A Sombra, A S B %A Jr., J A Freitas %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2008 %I ELSEVIER SCIENCE BV %J JOURNAL OF CRYSTAL GROWTH %K bulk nitrade semiconductors; semiconductors} {GaN; %N 17 %P 3992-3997 %R 10.1016/j.jcrysgro.2008.06.012 %T Dielectric studies of metal/n-GaN/metal Schottky contact in the radio frequency range %V 310 %X Capacitance-voltage and capacitance-frequency characteristics of the metal/n-GaN/metal Schottky contacts with Au, Al and Ag electrodes were investigated as a function of the temperature and external electric field in the frequency range from 100 to 300 kHz. Forward capacitance-voltage measurements were carried out in the frequency range from 100 Hz to 20 MHz. The temperature capacitance coefficient and the electrical tunability were measured as a function of the external DC held for all contacts. The capacitance and dielectric loss measurements show relaxation peaks from 4 to 11 kHz for some electrodes, indicating that interfacial effects play an important role in the electrical properties of the GaN Schottky barrier contact. Low-frequency relaxation Studies were conveniently used to probe interfacial characteristics of the contacts. (c) 2008 Elsevier B.V. All rights reserved.

@article{WOS:000259759500019, abstract = {Capacitance-voltage and capacitance-frequency characteristics of the metal/n-GaN/metal Schottky contacts with Au, Al and Ag electrodes were investigated as a function of the temperature and external electric field in the frequency range from 100 to 300 kHz. Forward capacitance-voltage measurements were carried out in the frequency range from 100 Hz to 20 MHz. The temperature capacitance coefficient and the electrical tunability were measured as a function of the external DC held for all contacts. The capacitance and dielectric loss measurements show relaxation peaks from 4 to 11 kHz for some electrodes, indicating that interfacial effects play an important role in the electrical properties of the GaN Schottky barrier contact. Low-frequency relaxation Studies were conveniently used to probe interfacial characteristics of the contacts. (c) 2008 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Fechine, P B A and Sombra, A S B and Jr., J A Freitas}, biburl = {https://www.bibsonomy.org/bibtex/27c5a7910fd603caff10874f538097cdd/ppgfis_ufc_br}, doi = {10.1016/j.jcrysgro.2008.06.012}, interhash = {20b1e549065ce84f7215459173c520cb}, intrahash = {7c5a7910fd603caff10874f538097cdd}, issn = {0022-0248}, journal = {JOURNAL OF CRYSTAL GROWTH}, keywords = {bulk nitrade semiconductors; semiconductors} {GaN;}, note = {5th International Workshop on Bulk Nitride Semiconductor, Itaparica, BRAZIL, SEP 24-28, 2007}, number = 17, pages = {3992-3997}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Dielectric studies of metal/n-GaN/metal Schottky contact in the radio frequency range}, tppubtype = {article}, volume = 310, year = 2008 }