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Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting.

, , , , and . IEEE J. Solid State Circuits, 33 (9): 1428-1432 (1998)

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Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting., , , , and . IEEE J. Solid State Circuits, 33 (9): 1428-1432 (1998)On the Design of a CMOS-integrated Load Modulated Balanced Amplifier., and . NorCAS, page 1-4. IEEE, (2020)Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS., , , and . ISCAS, page 1907-1910. IEEE, (2010)Power-efficient aliasing-free PWM transmitter., , and . IET Circuits Devices Syst., 13 (3): 273-278 (2019)Aliasing-Compensated Polar PWM Transmitter., , and . IEEE Trans. Circuits Syst. II Express Briefs, 64-II (8): 912-916 (2017)A Modified All-Digital Polar PWM Transmitter., , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 65-I (2): 758-768 (2018)Combined RF and multiphase PWM transmitter., , and . ECCTD, page 1-4. IEEE, (2015)An All-Digital PWM Transmitter With Enhanced Phase Resolution., , , and . IEEE Trans. Circuits Syst. II Express Briefs, 65-II (11): 1634-1638 (2018)Combined RF and multilevel PWM switch mode power amplifier., , and . NORCHIP, page 1-4. IEEE, (2013)Formation of a buried collector layer in RF-bipolar devices by ion implantation., and . Microelectron. J., 37 (11): 1366-1371 (2006)