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Utilising the normal distribution of the write noise margin to easily predict the SRAM write yield., , , , , , , and . IET Circuits Devices Syst., 6 (4): 260-270 (2012)Comments on "Leading-zero anticipatory logic for high-speed floating point addition" with reply., , , , , , and . IEEE J. Solid State Circuits, 32 (2): 292 (1997)Energy Efficient Stepwise Charging of a Capacitor Using a DC-DC Converter With Consecutive Changes of its Duty Ratio., , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (7): 2194-2203 (2014)Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution., , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 58-II (4): 230-234 (2011)A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 43 (1): 180-191 (2008)A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 43 (1): 96-108 (2008)A 32×24-bit multiplier-accumulator with advanced rectangular styled Wallace-tree structure., , , , , and . ISCAS (1), page 73-76. IEEE, (2005)Post-silicon programmed body-biasing platform suppressing device variability in 45 nm CMOS technology., , , , , and . ISLPED, page 15-20. ACM, (2008)Authors Reply., , , , and . IEEE J. Solid State Circuits, 32 (2): 293 (1997)The Challenge of Collaboration among Academies and Asia Pacific for ITS R&D., and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 98-A (1): 259-266 (2015)