%0 Journal Article %1 doi:10.1021/acs.nanolett.1c01271 %A Müller, Valentin L. %A Yan, Yuan %A Kashuba, Oleksiy %A Trauzettel, Björn %A Abdelghany, Mohamed %A Kleinlein, Johannes %A Beugeling, Wouter %A Buhmann, Hartmut %A Molenkamp, Laurens W. %D 2021 %J Nano Letters %K muellerv_high %N 12 %P 5195-5200 %R 10.1021/acs.nanolett.1c01271 %T Electron–Hole Scattering Limited Transport of Dirac Fermions in a Topological Insulator %U https://doi.org/10.1021/acs.nanolett.1c01271 %V 21 %X We have experimentally investigated the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We have found that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a nonmonotonic differential resistance of narrow channels. We have shown that the observed initial increase in resistance can be attributed to electron–hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron–hole scattering in the transport properties of topological insulators.

@article{doi:10.1021/acs.nanolett.1c01271, abstract = { We have experimentally investigated the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We have found that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a nonmonotonic differential resistance of narrow channels. We have shown that the observed initial increase in resistance can be attributed to electron–hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron–hole scattering in the transport properties of topological insulators. }, added-at = {2022-04-06T12:13:38.000+0200}, author = {Müller, Valentin L. and Yan, Yuan and Kashuba, Oleksiy and Trauzettel, Björn and Abdelghany, Mohamed and Kleinlein, Johannes and Beugeling, Wouter and Buhmann, Hartmut and Molenkamp, Laurens W.}, biburl = {https://www.bibsonomy.org/bibtex/230fe476910645ce044590a9ae8895878/zoologieii}, description = {Electron–Hole Scattering Limited Transport of Dirac Fermions in a Topological Insulator | Nano Letters}, doi = {10.1021/acs.nanolett.1c01271}, eprint = {https://doi.org/10.1021/acs.nanolett.1c01271}, interhash = {4443d483161733700604d3ce176da8a4}, intrahash = {30fe476910645ce044590a9ae8895878}, journal = {Nano Letters}, keywords = {muellerv_high}, note = {PMID: 34115500}, number = 12, pages = {5195-5200}, timestamp = {2022-04-06T12:13:38.000+0200}, title = {Electron–Hole Scattering Limited Transport of Dirac Fermions in a Topological Insulator}, url = {https://doi.org/10.1021/acs.nanolett.1c01271}, volume = 21, year = 2021 }