Strongly charged head-to-head domain walls that are purposely engineered along the 110 crystallographic orientation into ferroelectric BaTiO3 single crystals have been proposed as intrinsically nanoscaled two-dimensional electron gases (2DEGs) because of their significant conductivity. Here, we quantify these 2DEG properties through dedicated Hall transport measurements in van der Pauw 4-point geometry, finding the electron mobility to reach around 400 cm2 (V s)−1, while the two-dimensional charge density amounts to 7 × 103 cm–2. We underline the necessity to take into account the thermal and geometrical misalignment offset voltages by evaluating the Hall resistance under magnetic field sweeps; otherwise, errors of several hundred percent in the derived transport parameters can occur
Description
Nanoscale conductive sheets in ferroelectric BaTiO3: large hall electron mobilities at head-to-head domain walls
%0 Journal Article
%1 noauthororeditor
%A Beccard, Henrik
%A Kirbus, Benjamin
%A Beyreuther, Elke
%A Rüsing, Michael
%A Bednyakov, Petr
%A Hlinka, Jiří
%A Eng, Lukas M.
%D 2022
%I American Chemical Society
%J ACS Appl. Nano Mater.
%K c
%N 7
%P 8717-8722
%R 10.1021/acsanm.2c01919
%T Nanoscale conductive sheets in ferroelectric BaTiO$_3$: large Hall electron mobilities at head-to-head domain walls
%U https://doi.org/10.1021/acsanm.2c01919
%V 5
%X Strongly charged head-to-head domain walls that are purposely engineered along the 110 crystallographic orientation into ferroelectric BaTiO3 single crystals have been proposed as intrinsically nanoscaled two-dimensional electron gases (2DEGs) because of their significant conductivity. Here, we quantify these 2DEG properties through dedicated Hall transport measurements in van der Pauw 4-point geometry, finding the electron mobility to reach around 400 cm2 (V s)−1, while the two-dimensional charge density amounts to 7 × 103 cm–2. We underline the necessity to take into account the thermal and geometrical misalignment offset voltages by evaluating the Hall resistance under magnetic field sweeps; otherwise, errors of several hundred percent in the derived transport parameters can occur
@article{noauthororeditor,
abstract = {Strongly charged head-to-head domain walls that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO3 single crystals have been proposed as intrinsically nanoscaled two-dimensional electron gases (2DEGs) because of their significant conductivity. Here, we quantify these 2DEG properties through dedicated Hall transport measurements in van der Pauw 4-point geometry, finding the electron mobility to reach around 400 cm2 (V s)−1, while the two-dimensional charge density amounts to 7 × 103 cm–2. We underline the necessity to take into account the thermal and geometrical misalignment offset voltages by evaluating the Hall resistance under magnetic field sweeps; otherwise, errors of several hundred percent in the derived transport parameters can occur},
added-at = {2023-04-18T20:36:15.000+0200},
author = {Beccard, Henrik and Kirbus, Benjamin and Beyreuther, Elke and Rüsing, Michael and Bednyakov, Petr and Hlinka, Jiří and Eng, Lukas M.},
biburl = {https://www.bibsonomy.org/bibtex/2f48d56242f710c998a37924da9dfb76f/ctqmat},
day = 11,
description = {Nanoscale conductive sheets in ferroelectric BaTiO3: large hall electron mobilities at head-to-head domain walls },
doi = {10.1021/acsanm.2c01919},
interhash = {793157249abe24ad36da32e3a4599433},
intrahash = {f48d56242f710c998a37924da9dfb76f},
journal = {ACS Appl. Nano Mater.},
keywords = {c},
month = {07},
number = 7,
pages = {8717-8722},
publisher = {American Chemical Society},
timestamp = {2023-10-18T14:04:00.000+0200},
title = {Nanoscale conductive sheets in ferroelectric BaTiO$_{\mathbf{3}}$: large Hall electron mobilities at head-to-head domain walls},
url = {https://doi.org/10.1021/acsanm.2c01919},
volume = 5,
year = 2022
}