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Temperature-Dependent Dislocation Mobility Threshold

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Abstract Book of the XXIII IUPAP International Conference on Statistical Physics, Genova, Italy, (9-13 July 2007)

Аннотация

Temperature dependence of a dislocation mobility threshold of the Frenkel-Kontorova crystal is investigated on the basis of a Born-Matsubara method. This variational method is based in the analysis of the system free-Gibbs energy in the framework of the ensemble of statistically independent harmonic oscillators of the Einstein-type frequencies, which are to be determined from the variational procedure. Employing this powerful method we obtained a temperature/force dependent dislocation mobility threshold. It is ascertained that the constant activation energy curves (the isoenergy curves) are practically equivalent in the reduced coordinates. It is revealed that the dislocation depinning barrier demonstrates a power-law dependence near the mobility threshold. Such a feature confirms the universality of the dislocation depinning process.

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