%0 Journal Article %1 journals/chinaf/ZhangAHLZH18 %A Zhang, Bingxin %A An, Xia %A Hu, Xiangyang %A Li, Ming %A Zhang, Xing %A Huang, Ru %D 2018 %J Sci. China Inf. Sci. %K dblp %N 6 %P 069405:1-069405:3 %T GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. %U http://dblp.uni-trier.de/db/journals/chinaf/chinaf61.html#ZhangAHLZH18 %V 61

@article{journals/chinaf/ZhangAHLZH18, added-at = {2024-06-03T00:00:00.000+0200}, author = {Zhang, Bingxin and An, Xia and Hu, Xiangyang and Li, Ming and Zhang, Xing and Huang, Ru}, biburl = {https://www.bibsonomy.org/bibtex/270c45c8c8b5c8407e4135f004348eecd/dblp}, ee = {https://doi.org/10.1007/s11432-017-9264-0}, interhash = {0decb81e1f24de9d958008882962db99}, intrahash = {70c45c8c8b5c8407e4135f004348eecd}, journal = {Sci. China Inf. Sci.}, keywords = {dblp}, number = 6, pages = {069405:1-069405:3}, timestamp = {2024-06-10T07:04:07.000+0200}, title = {GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs.}, url = {http://dblp.uni-trier.de/db/journals/chinaf/chinaf61.html#ZhangAHLZH18}, volume = 61, year = 2018 }