%0 Journal Article %1 citeulike:4544760 %A Kittl, Jorge A. %A Opsomer, Karl %A Popovici, M. %A Menou, N. %A Kaczer, Ben %A Wang, X. P. %A Adelmann, C. %A Pawlak, M. A. %A Tomida, K. %A Rothschild, Aude %A Govoreanu, Bogdan %A Degraeve, R. %A Schaekers, M. %A Zahid, M. %A Delabie, A. %A Meersschaut, J. %A Polspoel, W. %A Clima, Sergiu %A Pourtois, Geoffrey %A Knaepen, W. %A Detavernier, Christophe %A Afanas'ev, Valery %A Blomberg, T. %A Pierreux, D. %A Swerts, J. %A Fischer, P. %A Maes, J. W. %A Manger, D. %A Vandervorst, Wilfried %A Conrad, T. %A Franquet, A. %A Favia, P. %A Bender, Hugo %A Brijs, B. %A Elshocht, S. Van %A Jurczak, Malgorzata %A Houdt, J. Van %A Wouters, Dirk J. %D 2009 %E Narayanan, V. %E Roozeboom, F. %E Kwong, D. %E Iwai, H. %E Gusev, E. %E Timans, P. %I ECS %J ECS Transactions %K bessy, high-k %N 1 %P 29--40 %T High-k Dielectrics and Metal Gates for Future Generation Memory Devices %U http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ECSTF8000019000001000029000001&idtype=cvips&gifs=yes %V 19

@article{citeulike:4544760, added-at = {2009-05-19T18:00:18.000+0200}, author = {Kittl, Jorge A. and Opsomer, Karl and Popovici, M. and Menou, N. and Kaczer, Ben and Wang, X. P. and Adelmann, C. and Pawlak, M. A. and Tomida, K. and Rothschild, Aude and Govoreanu, Bogdan and Degraeve, R. and Schaekers, M. and Zahid, M. and Delabie, A. and Meersschaut, J. and Polspoel, W. and Clima, Sergiu and Pourtois, Geoffrey and Knaepen, W. and Detavernier, Christophe and Afanas'ev, Valery and Blomberg, T. and Pierreux, D. and Swerts, J. and Fischer, P. and Maes, J. W. and Manger, D. and Vandervorst, Wilfried and Conrad, T. and Franquet, A. and Favia, P. and Bender, Hugo and Brijs, B. and Elshocht, S. Van and Jurczak, Malgorzata and Houdt, J. Van and Wouters, Dirk J.}, biburl = {https://www.bibsonomy.org/bibtex/26c08e3b1e91b24bdf79afd17045a7302/earthfare}, citeulike-article-id = {4544760}, description = {CiteULike: Everyone's library}, editor = {Narayanan, V. and Roozeboom, F. and Kwong, D. and Iwai, H. and Gusev, E. and Timans, P.}, interhash = {0eb93c3b74d6e63e342f1044e687e7cf}, intrahash = {6c08e3b1e91b24bdf79afd17045a7302}, journal = {ECS Transactions}, keywords = {bessy, high-k}, number = 1, pages = {29--40}, posted-at = {2009-05-19 12:01:48}, priority = {2}, publisher = {ECS}, timestamp = {2009-05-19T18:03:27.000+0200}, title = {High-k Dielectrics and Metal Gates for Future Generation Memory Devices}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal\&id=ECSTF8000019000001000029000001\&idtype=cvips\&gifs=yes}, volume = 19, year = 2009 }