Article,

Light-induced programming of Si nanocrystal flash memories

, , and .
APPLIED PHYSICS LETTERS, (2008)
DOI: 10.1063/1.2839326

Abstract

We show theoretically that it is possible to achieve much faster programming performances in nanocrystal flash memory devices by means of a light-induced mechanism that inverts the direction of charge transfer between nanocrystals and device substrate in comparison to conventional voltage-induced programming. Our method is based on the self-consistent solutions of Hartree and Poisson equation for both electrons and holes with open boundary conditions. (C) 2008 American Institute of Physics.

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