Abstract
We show theoretically that it is possible to achieve much faster
programming performances in nanocrystal flash memory devices by means of
a light-induced mechanism that inverts the direction of charge transfer
between nanocrystals and device substrate in comparison to conventional
voltage-induced programming. Our method is based on the self-consistent
solutions of Hartree and Poisson equation for both electrons and holes
with open boundary conditions. (C) 2008 American Institute of Physics.
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