Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.
@article{journals/mr/LuoYWXTRXWQYZZC16,
added-at = {2023-03-21T00:00:00.000+0100},
author = {Luo, Weichun and Yang, Hong and Wang, Wenwu and Xu, Yefeng and Tang, Bo and Ren, Shangqing and Xu, Hao and Wang, Yanrong and Qi, Luwei and Yan, Jiang and Zhu, Huilong and Zhao, Chao and Chen, Dapeng and Ye, Tianchun},
biburl = {https://www.bibsonomy.org/bibtex/20224c4a020ab542e71082cd8c9c1bbd7/dblp},
ee = {https://doi.org/10.1016/j.microrel.2016.03.008},
interhash = {26fe9148d6fb15347908152cc232eb2c},
intrahash = {0224c4a020ab542e71082cd8c9c1bbd7},
journal = {Microelectron. Reliab.},
keywords = {dblp},
pages = {70-73},
timestamp = {2024-04-09T02:50:51.000+0200},
title = {Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr62.html#LuoYWXTRXWQYZZC16},
volume = 62,
year = 2016
}