%0 Journal Article %1 Zheng2003a %A Zheng, X. M. %A Xu, Y. %A Sobolewski, R. %A Adam, R. %A Mikulics, M. %A Siegel, M. %A Kordos, P. %D 2003 %J Applied Optics %K %N 9 %P 1726--1731 %R 10.1364/AO.42.001726 %T Femtosecond response of a free-standing LT-GaAs photoconductive switch %V 42 %X We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America.

@article{Zheng2003a, abstract = {We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America.}, added-at = {2011-10-24T23:20:24.000+0200}, author = {Zheng, X. M. and Xu, Y. and Sobolewski, R. and Adam, R. and Mikulics, M. and Siegel, M. and Kordos, P.}, biburl = {https://www.bibsonomy.org/bibtex/209e545a170721f28ce5347ed7401ad50/jabreftest}, doi = {10.1364/AO.42.001726}, groups = {public}, interhash = {379b053c579e3b8c46d352a6d2b86fb2}, intrahash = {09e545a170721f28ce5347ed7401ad50}, journal = {Applied Optics}, keywords = {}, month = {#mar#}, number = 9, pages = {1726--1731}, sn = {0003-6935}, tc = {23}, timestamp = {2011-10-24T23:20:24.000+0200}, title = {Femtosecond response of a free-standing LT-GaAs photoconductive switch}, username = {jabreftest}, ut = {WOS:000181708400019}, volume = 42, year = 2003, z9 = {23} }