Article,
Controlling the electronic bands of a 2D semiconductor by force microscopy
2D MATERIALS, (2020)
DOI: 10.1088/2053-1583/aba5cb
Abstract
In this work, we investigate the transverse transport properties of
few-layers MoS(2)using a Conductive Atomic Force Microscopy based
technique. We find that the system changes between a low-force regime,
characterized by a nearly-ideal contact between the MoS(2)flake and the
substrate, and a high-force regime, for which this contact starts to
become highly non-ideal. We propose a 3-diode model that effectively
describes the current-voltage characteristics of few-layers MoS2. From
this model, we estimate how fast the energy gaps of two-dimensional
MoS(2)materials change as a function of the applied force. From our
analysis, we estimate that MoS2-Au Schottky barrier heights change at
the rate of 0.21, 0.23, and 0.78 meV nN(-1)for the few-layers,
three-layers, and two-layers MoS2, respectively. Our work opens up new
possibilities of investigating and controlling the electronic properties
of 2D semiconducting materials.
Tags
- (afm);
- (cafm)}
- afm
- atomic
- conductive
- electronic
- engineering;
- force
- microscopy
- mos2;
- semiconductor;
- strain
- transport;
- {2d
