@article{journals/chinaf/YangLXZZTGLCXH24,
added-at = {2024-10-06T00:00:00.000+0200},
author = {Yang, Qiyu and Luo, Zheng-Dong and Xiao, Fei and Zhang, Junpeng and Zhang, Dawei and Tan, Dongxin and Gan, Xuetao and Liu, Yan and Chu, Zhufei and Xia, Yinshui and Han, Genquan},
biburl = {https://www.bibsonomy.org/bibtex/28b4d6e93b26ceea8e3e94d3d436dce56/dblp},
ee = {https://doi.org/10.1007/s11432-024-4004-9},
interhash = {44611515f691fa33d70afefe2dabba0a},
intrahash = {8b4d6e93b26ceea8e3e94d3d436dce56},
journal = {Sci. China Inf. Sci.},
keywords = {dblp},
number = 6,
timestamp = {2024-10-07T07:53:13.000+0200},
title = {Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.},
url = {http://dblp.uni-trier.de/db/journals/chinaf/chinaf67.html#YangLXZZTGLCXH24},
volume = 67,
year = 2024
}