Patent,

Process for the synthesis of hard boron nitride

, , , and .
(1994)

Abstract

here can be provided a novel and useful process for the synthesis of hard boron nitride consisting essentially of single phase cubic boron nitride by a gaseous phase synthesis technique, which comprises adding a F atom-containing gas to the gaseous phase or adding a F atom-containing gas and H atom-containing gas to the gaseous phase, whereby the codeposited hexagonal boron nitride can selectively be etched and hard boron nitride of substantially single phase can finally be synthesized.

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