Abstract
here can be provided a novel and useful process for the synthesis
of hard boron nitride consisting essentially of single phase cubic
boron nitride by a gaseous phase synthesis technique, which comprises
adding a F atom-containing gas to the gaseous phase or adding a F
atom-containing gas and H atom-containing gas to the gaseous phase,
whereby the codeposited hexagonal boron nitride can selectively be
etched and hard boron nitride of substantially single phase can finally
be synthesized.
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