Inproceedings,
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications.
M. Carissimi, R. Mukherjee, V. Tyagi, F. Disegni, D. Manfrè, C. Torti, D. Gallinari, S. Rossi, A. Gambero, D. Brambilla, P. Zuliani, R. Zurla, A. Cabrini, G. Torelli, M. Pasotti, C. Auricchio, E. Calvetti, L. Capecchi, L. Croce, S. Zanchi, V. Rana, and P. Mishra.ESSCIRC, page 135-138. IEEE, (2019)
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- conf/esscirc/CarissimiMTDMTG19
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- inproceedings
- booktitle
- ESSCIRC
- year
- 2019
- pages
- 135-138
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- IEEE
- crossref
- conf/esscirc/2019
- ee
- https://doi.org/10.1109/ESSCIRC.2019.8902656
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- 978-1-7281-1550-4
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- http://dblp.uni-trier.de/db/conf/esscirc/esscirc2019.html#CarissimiMTDMTG19
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%1 conf/esscirc/CarissimiMTDMTG19
%A Carissimi, Marcella
%A Mukherjee, Ritesh
%A Tyagi, Vivek
%A Disegni, Fabio
%A Manfrè, Davide
%A Torti, Cesare
%A Gallinari, Daniele
%A Rossi, Sandro
%A Gambero, Andrea
%A Brambilla, Donatella
%A Zuliani, Paola
%A Zurla, Riccardo
%A Cabrini, Alessandro
%A Torelli, Guido
%A Pasotti, Marco
%A Auricchio, Chantal
%A Calvetti, Emanuela
%A Capecchi, Laura
%A Croce, Luigi
%A Zanchi, Stefano
%A Rana, Vikas
%A Mishra, Preeti
%B ESSCIRC
%D 2019
%I IEEE
%K dblp
%P 135-138
%T 2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications.
%U http://dblp.uni-trier.de/db/conf/esscirc/esscirc2019.html#CarissimiMTDMTG19
%@ 978-1-7281-1550-4
@inproceedings{conf/esscirc/CarissimiMTDMTG19,
added-at = {2022-04-09T00:00:00.000+0200},
author = {Carissimi, Marcella and Mukherjee, Ritesh and Tyagi, Vivek and Disegni, Fabio and Manfrè, Davide and Torti, Cesare and Gallinari, Daniele and Rossi, Sandro and Gambero, Andrea and Brambilla, Donatella and Zuliani, Paola and Zurla, Riccardo and Cabrini, Alessandro and Torelli, Guido and Pasotti, Marco and Auricchio, Chantal and Calvetti, Emanuela and Capecchi, Laura and Croce, Luigi and Zanchi, Stefano and Rana, Vikas and Mishra, Preeti},
biburl = {https://www.bibsonomy.org/bibtex/28324ac48cd6624c5e0cb07f7663e31c2/dblp},
booktitle = {ESSCIRC},
crossref = {conf/esscirc/2019},
ee = {https://doi.org/10.1109/ESSCIRC.2019.8902656},
interhash = {5987989f42935cae68dff0f31379e6c2},
intrahash = {8324ac48cd6624c5e0cb07f7663e31c2},
isbn = {978-1-7281-1550-4},
keywords = {dblp},
pages = {135-138},
publisher = {IEEE},
timestamp = {2024-04-10T11:59:28.000+0200},
title = {2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications.},
url = {http://dblp.uni-trier.de/db/conf/esscirc/esscirc2019.html#CarissimiMTDMTG19},
year = 2019
}