%0 Journal Article %1 journals/mr/LiZLXC08 %A Li, C. X. %A Zou, X. %A Lai, Pui-To %A Xu, Jing-Ping %A Chan, C. L. %D 2008 %J Microelectron. Reliab. %K dblp %N 4 %P 526-530 %T Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. %U http://dblp.uni-trier.de/db/journals/mr/mr48.html#LiZLXC08 %V 48

@article{journals/mr/LiZLXC08, added-at = {2023-10-02T00:00:00.000+0200}, author = {Li, C. X. and Zou, X. and Lai, Pui-To and Xu, Jing-Ping and Chan, C. L.}, biburl = {https://www.bibsonomy.org/bibtex/29a0c1c423ec4ea5467a31f26b8ca35ee/dblp}, ee = {https://doi.org/10.1016/j.microrel.2007.11.004}, interhash = {5f8d1789fcd84a57547d868163988f85}, intrahash = {9a0c1c423ec4ea5467a31f26b8ca35ee}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 4, pages = {526-530}, timestamp = {2024-04-09T02:48:37.000+0200}, title = {Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr48.html#LiZLXC08}, volume = 48, year = 2008 }