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Nitrogen-Silicon Heterodoping of Carbon Nanotubes

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JOURNAL OF PHYSICAL CHEMISTRY C, 117 (16): 8481-8490 (2013)
DOI: 10.1021/jp312427z

Аннотация

Si/O/N-doped single-walled carbon nanotubes (SWNTs) are synthesized using aerosol-assisted chemical vapor deposition (AACVD). The samples are characterized by Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), energy-dispersive X-ray spectroscopy (EDS), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). HRTEM and Raman spectroscopy studies indicate that doping plays a crucial role in the generation of stable small diameter SWNTs. In order to elucidate the role of the heterodoping (Si/N, O/N, and Si/O) on the electronic properties and stability of SWNTs, density functional theory (DFT) computations on semiconductor (10,0), semimetallic (9,0), and metallic (5,5) SWNTs are performed. It is found that in the heterodoped SWNTs substitutional nitrogen makes the inclusion of Si and O atoms more energetically favorable within the carbon lattice. Heterodoping with Si/O/N may have an important impact in the chemistry of SWNTs as they could be used for anchoring polymer chains, clusters, molecules, etc., thus leading to advanced composites and sensors.

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