%0 Journal Article %1 WOS:000083886800011 %A Shi, JM %A Freire, VN %A Farias, GA %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 1999 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K electronic nanostructures; optical properties; states} {semiconductors; %N 2 %P 115-119 %R 10.1016/S0038-1098(99)00449-4 %T Energy level broadening control in quantum dots by interfacial doping %V 113 %X A method is proposed to diminish the energy level broadening in quantum dots due to size fluctuations. It is shown that doping the Faded interface region of quantum dots can considerably reduce the broadening of their energy levels. In the case of spherical GaAs/Al0.3Ga0.7As dots of radii similar to 50 Angstrom and interface width 20 Angstrom, the presence of a Si donor in the middle of the interfaces can decrease their energy level broadening by as much as 20 meV. (C) 1999 Elsevier Science Ltd. All rights reserved.

@article{WOS:000083886800011, abstract = {A method is proposed to diminish the energy level broadening in quantum dots due to size fluctuations. It is shown that doping the Faded interface region of quantum dots can considerably reduce the broadening of their energy levels. In the case of spherical GaAs/Al0.3Ga0.7As dots of radii similar to 50 Angstrom and interface width 20 Angstrom, the presence of a Si donor in the middle of the interfaces can decrease their energy level broadening by as much as 20 meV. (C) 1999 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Shi, JM and Freire, VN and Farias, GA}, biburl = {https://www.bibsonomy.org/bibtex/2047cc8727a1f3ad9d044fad68ca8bc57/ppgfis_ufc_br}, doi = {10.1016/S0038-1098(99)00449-4}, interhash = {64a0197df3b72cd9f93bc704e37fd2ac}, intrahash = {047cc8727a1f3ad9d044fad68ca8bc57}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {electronic nanostructures; optical properties; states} {semiconductors;}, number = 2, pages = {115-119}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Energy level broadening control in quantum dots by interfacial doping}, tppubtype = {article}, volume = 113, year = 1999 }