Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling.
Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Conference Paper
%1 conf/aspdac/ChenGC16
%A Chen, Ying-Yu
%A Gholipour, Morteza
%A Chen, Deming
%B ASP-DAC
%D 2016
%I IEEE
%K dblp
%P 761-768
%T Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling.
%U http://dblp.uni-trier.de/db/conf/aspdac/aspdac2016.html#ChenGC16
%@ 978-1-4673-9569-4
@inproceedings{conf/aspdac/ChenGC16,
added-at = {2017-05-26T00:00:00.000+0200},
author = {Chen, Ying-Yu and Gholipour, Morteza and Chen, Deming},
biburl = {https://www.bibsonomy.org/bibtex/244ba42dfb1c3c0bdac5b51d8fd7e02e8/dblp},
booktitle = {ASP-DAC},
crossref = {conf/aspdac/2016},
ee = {https://doi.org/10.1109/ASPDAC.2016.7428103},
interhash = {6e279f9c54a696d0802aa02d58cfe066},
intrahash = {44ba42dfb1c3c0bdac5b51d8fd7e02e8},
isbn = {978-1-4673-9569-4},
keywords = {dblp},
pages = {761-768},
publisher = {IEEE},
timestamp = {2019-10-17T16:46:00.000+0200},
title = {Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling.},
url = {http://dblp.uni-trier.de/db/conf/aspdac/aspdac2016.html#ChenGC16},
year = 2016
}
