Abstract
Charge image effects on the confinement properties of Si/SrTiO3 and
Si/HfO2 two-dimensional quantum wells are studied. The combination of
strong dielectric mismatch and band offset of the layers gives rise to
structured confinement potentials, which can trap carriers close to the
interfaces in Si/SrTiO3 but not in Si/HfO2 two-dimensional quantum
wells. The charge image blueshifts strongly (a few hundred meV) the
carrier recombination energy, comparable to the shift related to the
well width shortening due to actual graded interfaces. (c) 2006 American
Institute of Physics.
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