Article,

Large image potential effects in Si/SrTiO3 and Si/HfO2 two-dimensional quantum well structures

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APPLIED PHYSICS LETTERS, (2006)
DOI: 10.1063/1.2212279

Abstract

Charge image effects on the confinement properties of Si/SrTiO3 and Si/HfO2 two-dimensional quantum wells are studied. The combination of strong dielectric mismatch and band offset of the layers gives rise to structured confinement potentials, which can trap carriers close to the interfaces in Si/SrTiO3 but not in Si/HfO2 two-dimensional quantum wells. The charge image blueshifts strongly (a few hundred meV) the carrier recombination energy, comparable to the shift related to the well width shortening due to actual graded interfaces. (c) 2006 American Institute of Physics.

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