%0 Journal Article %1 Shabanpour2016 %A Shabanpour, R. %A Meister, T. %A Ishida, K. %A Kheradmand-Boroujeni, B. %A Carta, C. %A Ellinger, F. %A Petti, L. %A Münzenrieder, N. %A Salvatore, G. A. %A Tröster, G. %D 2016 %J Analog Integrated Circuits and Signal Processing %K myown %N 2 %P 213--222 %R 10.1007/s10470-015-0655-3 %T Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology %U https://doi.org/10.1007/s10470-015-0655-3 %V 87 %X This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc power of 2.32 mW. The chip areas of the amplifiers are 7.5 and 10.3 mm2, respectively. By using a gain-enhancement technique in the first amplifier, gain, dc power consumption, and chip area are greatly improved. The presented amplifiers are designed for using as audio pre-amplifiers in a radio receiver. The presented measurements confirm that the amplifiers meet the requirements for this purpose. The circuits are designed using the Verilog-A Rensselaer Polytechnic Institute-amorphous TFT model; circuit simulations are also presented for comparison with the hardware characterization. Additionally, the impact of process variations on the amplifiers is analyzed and discussed in details.

@article{Shabanpour2016, abstract = {This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc power of 2.32 mW. The chip areas of the amplifiers are 7.5 and 10.3 mm2, respectively. By using a gain-enhancement technique in the first amplifier, gain, dc power consumption, and chip area are greatly improved. The presented amplifiers are designed for using as audio pre-amplifiers in a radio receiver. The presented measurements confirm that the amplifiers meet the requirements for this purpose. The circuits are designed using the Verilog-A Rensselaer Polytechnic Institute-amorphous TFT model; circuit simulations are also presented for comparison with the hardware characterization. Additionally, the impact of process variations on the amplifiers is analyzed and discussed in details.}, added-at = {2023-05-22T11:49:51.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Kheradmand-Boroujeni, B. and Carta, C. and Ellinger, F. and Petti, L. and M{\"u}nzenrieder, N. and Salvatore, G. A. and Tr{\"o}ster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2598f844b204f703396ae9f12a1dc2108/nikomu}, day = 01, description = {Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology | SpringerLink}, doi = {10.1007/s10470-015-0655-3}, interhash = {885c578cf45eb14bc706d3bb2dada77d}, intrahash = {598f844b204f703396ae9f12a1dc2108}, issn = {1573-1979}, journal = {Analog Integrated Circuits and Signal Processing}, keywords = {myown}, month = may, number = 2, pages = {213--222}, timestamp = {2023-05-22T11:49:51.000+0200}, title = {Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology}, url = {https://doi.org/10.1007/s10470-015-0655-3}, volume = 87, year = 2016 }