%0 Journal Article %1 journals/mj/LiuHMZY18 %A Liu, Lianxi %A Huang, Wenbin %A Mu, Junchao %A Zhu, Zhangming %A Yang, Yintang %D 2018 %J Microelectron. J. %K dblp %P 49-57 %T A 1.2 V, 3.0 ppm/°C, 3.6 μA CMOS bandgap reference with novel 3-order curvature compensation. %U http://dblp.uni-trier.de/db/journals/mj/mj72.html#LiuHMZY18 %V 72

@article{journals/mj/LiuHMZY18, added-at = {2021-08-02T00:00:00.000+0200}, author = {Liu, Lianxi and Huang, Wenbin and Mu, Junchao and Zhu, Zhangming and Yang, Yintang}, biburl = {https://www.bibsonomy.org/bibtex/24105dbe100c48153df2781711a4ffff9/dblp}, ee = {https://doi.org/10.1016/j.mejo.2017.12.006}, interhash = {88876d1cda7583dbc79a3b0671899467}, intrahash = {4105dbe100c48153df2781711a4ffff9}, journal = {Microelectron. J.}, keywords = {dblp}, pages = {49-57}, timestamp = {2024-04-08T21:37:07.000+0200}, title = {A 1.2 V, 3.0 ppm/°C, 3.6 μA CMOS bandgap reference with novel 3-order curvature compensation.}, url = {http://dblp.uni-trier.de/db/journals/mj/mj72.html#LiuHMZY18}, volume = 72, year = 2018 }