%0 Conference Paper %1 conf/asscc/SiddiquiLK17 %A Siddiqui, M. Sultan M. %A Lee, Zhao Chuan %A Kim, Tony Tae-Hyoung %B A-SSCC %D 2017 %I IEEE %K dblp %P 165-168 %T A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI. %U http://dblp.uni-trier.de/db/conf/asscc/asscc2017.html#SiddiquiLK17 %@ 978-1-5386-3178-2

@inproceedings{conf/asscc/SiddiquiLK17, added-at = {2018-01-05T00:00:00.000+0100}, author = {Siddiqui, M. Sultan M. and Lee, Zhao Chuan and Kim, Tony Tae-Hyoung}, biburl = {https://www.bibsonomy.org/bibtex/28a834579f27a73fb86806491e2b24095/dblp}, booktitle = {A-SSCC}, crossref = {conf/asscc/2017}, ee = {https://doi.org/10.1109/ASSCC.2017.8240242}, interhash = {88d1dbd1f8327f4a9a62c5cb73406bad}, intrahash = {8a834579f27a73fb86806491e2b24095}, isbn = {978-1-5386-3178-2}, keywords = {dblp}, pages = {165-168}, publisher = {IEEE}, timestamp = {2018-01-06T11:34:28.000+0100}, title = {A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI.}, url = {http://dblp.uni-trier.de/db/conf/asscc/asscc2017.html#SiddiquiLK17}, year = 2017 }