%0 Conference Paper %1 conf/essderc/LiWK12 %A Li, Qi %A Wang, Bo %A Kim, Tony T. %B ESSDERC %D 2012 %I IEEE %K dblp %P 201-204 %T A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement. %U http://dblp.uni-trier.de/db/conf/essderc/essderc2012.html#LiWK12 %@ 978-1-4673-1707-8

@inproceedings{conf/essderc/LiWK12, added-at = {2018-03-05T00:00:00.000+0100}, author = {Li, Qi and Wang, Bo and Kim, Tony T.}, biburl = {https://www.bibsonomy.org/bibtex/2466a05d4372a8717a5174ee0342924d5/dblp}, booktitle = {ESSDERC}, crossref = {conf/essderc/2012}, ee = {https://doi.org/10.1109/ESSDERC.2012.6343368}, interhash = {8a5d189d45009cb1c240ceade5cde9be}, intrahash = {466a05d4372a8717a5174ee0342924d5}, isbn = {978-1-4673-1707-8}, keywords = {dblp}, pages = {201-204}, publisher = {IEEE}, timestamp = {2019-10-17T12:39:51.000+0200}, title = {A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement.}, url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2012.html#LiWK12}, year = 2012 }