Abstract
The electrical properties of polycrystalline Si1-xGex/HfO2/Si
metal-oxide-semiconductor (MOS) devices are investigated theoretically
by solving self-consistently the Poisson and Schrodinger equations. Our
calculations demonstrate that the combination of HfO2 as dielectric film
and polycrystalline gates causes charge inversion in both substrate and
gate layer for ultrathin oxide layers. This effect is a consequence of
the high dielectric constant of HfO2, and it is expected to occur for
all high-kappa-based polygated MOS devices. However, the relative doping
concentration between polycrystalline gate and substrate can be used to
decrease the effect of gate inversion. (c) 2005 American Institute of
Physics.
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