%0 Conference Paper %1 conf/vlsit/LeeCHCLLTLL23 %A Lee, J.-Y. %A Chang, F.-S. %A Hsiang, Kuo-Yu %A Chen, P.-H. %A Luo, Z.-F. %A Li, Z.-X. %A Tsai, J.-H. %A Liu, C. W. %A Lee, Min-Hung %B VLSI Technology and Circuits %D 2023 %I IEEE %K dblp %P 1-2 %T 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. %U http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#LeeCHCLLTLL23 %@ 978-4-86348-806-9

@inproceedings{conf/vlsit/LeeCHCLLTLL23, added-at = {2024-10-06T00:00:00.000+0200}, author = {Lee, J.-Y. and Chang, F.-S. and Hsiang, Kuo-Yu and Chen, P.-H. and Luo, Z.-F. and Li, Z.-X. and Tsai, J.-H. and Liu, C. W. and Lee, Min-Hung}, biburl = {https://www.bibsonomy.org/bibtex/278323e1dfda931cb8c2f2430e52e9dcf/dblp}, booktitle = {VLSI Technology and Circuits}, crossref = {conf/vlsit/2023}, ee = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163}, interhash = {aa90709301c0101ca31b70fbd6b2272d}, intrahash = {78323e1dfda931cb8c2f2430e52e9dcf}, isbn = {978-4-86348-806-9}, keywords = {dblp}, pages = {1-2}, publisher = {IEEE}, timestamp = {2024-10-07T09:09:28.000+0200}, title = {3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.}, url = {http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#LeeCHCLLTLL23}, year = 2023 }